LH1535AAB/ aabtr/ at document number 83870 rev. 1.3, 26-oct-04 vishay semiconductors www.vishay.com 1 4 65 s' s dc 123 ss' i179001 dip smd pb p b -free e3 1 form a solid state relay features ? current limit protection isolation test voltage 5300 v rms typical r on 20 ? , max 25 ? load voltage 400 v load current 120 ma high surge capability clean bounce free switching low power consumption high reliability monolithic receptor smd lead available on tape and reel lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa - certification 093751 bsi/babt cert. no. 7980 fimko approval applications general telecom switching - on/off hook control - ring delay - dial pulse - ground start - ground fault protection instrumentation industrial controls see "solid state relays" ( application note 56) description the lh1535 is robust, ideal for telecom and ground fault applications. it is a spst normally open switch (form a) that replaces electromechanical relays in many applications. it is constructed using a gaaias led for actuation control and an integrated monolithic die for the switch output. the die, fabricated in a high- voltage dielectrically isolated technology, is com- prised of a photodiode array, switch control circuitry and mosfet switches. in addition, it employs cur- rent-limiting circuitry which meets fcc 68.302 and other regulatory voltage surge requirements when overvoltage protection is provided. order information part remarks LH1535AAB smd-6 LH1535AABtr tape and reel, smd-6 lh1535at thru hole, dip-6
www.vishay.com 2 document number 83870 rev. 1.3, 26-oct-04 LH1535AAB/ aabtr/ at vishay semiconductors absolute maximum ratings, t amb = 25 c stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum ratings for extended periods of time can adversely affect reliability. ssr 1) refer to current limit performance application note for a discussion on relay operat ion during transient currents. electrical char acteristics, t amb = 25 c minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluations. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit led continuous forward current i f 50 ma led reverse voltage i r 10 av r 8.0 v dc or peak ac load voltage i l 50 av l 400 v continuous dc load current - bidirectional operation i l 120 ma continuous dc load current - unidirectional operation i l 250 ma peak load current (single shot) t = 100 ms i p 1) ma ambient temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 150 c pin soldering temperature t = 10 s max t sld 260 c input/output isolation voltage v iso 5300 v rms output power dissipation (continuous) p diss 550 mw parameter test condition symbol min ty p. max unit led forward current, switch turn-on i l = 100 ma, t = 10 ms i fon 0.75 2.0 ma led forward current, switch turn-off v l = 150 v, t = 100 ms i foff 0.2 0.65 ma led forward voltage, switch turn-on i f = 10 ma v f 1.15 1.27 1.45 v parameter test condition symbol min ty p. max unit on-resistance ac/dc i f = 5.0 ma, i l = 50 ma r on 12 20 25 ? on-resistance dc i f = 5.0 ma, i l = 100 ma r on 3.0 6.0 6.25 ? off-resistance i f = 0 ma, v l = 100 v r off 0.5 200 g ? current limit dc i f = 5.0 ma, v l = 6.0 v, t = 5.0 ms i lmt 175 210 250 ma off-state leakage current i f = 0 ma, v l = 100 v i o 0.5 200 na i f = 0 ma, v l = 400 v i o 136 na output capacitance i f = 0 ma, v l = 1.0 v c o 21.6 pf i f = 0 ma, v l = 50 v c o 9pf switch offset i f = 5.0 ma v os 0.4 v breakdown voltage i f = 0 ma v br 433 v
LH1535AAB/ aabtr/ at document number 83870 rev. 1.3, 26-oct-04 vishay semiconductors www.vishay.com 3 transfer typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit capacitance (input-output) v iso = 1.0 v c io 0.75 pf turn-on time i f = 5.0 ma, i l = 50 ma t on 0.7 2.0 ms turn-off time i f = 5.0 ma, i l = 50 ma t off 0.6 2.0 ms figure 1. recommended operating conditions figure 2. led voltage vs. temperature 0 20 40 60 80 100 120 C40 10 60 18748 load current (ma) i =4to10ma ambient temperature ( c) i =2ma i=1ma fon fon fon 1.0 1.1 1.2 1.3 1.4 1.5 1.6 C40 C20 0 20 40 60 80 18749 led forward voltage (v) i = 50 ma temperature ( c) i = 20 ma i = 10 ma i=5ma i =2ma i =1ma f f f f f f figure 3.ledforwardcurrentvs.ledforwardvoltage figure 4.o-resistancevs.temperature 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 18750 led forward current (ma) t=85c t=C40c led forward voltage (v ) t=25c C40 C30 C20 C10 0 10 20 30 40 C40 C20 0 20 40 60 80 18751 change in onCresistance (%), temperature (c) norm. to 25 c
www.vishay.com 4 document number 83870 rev. 1.3, 26-oct-04 LH1535AAB/ aabtr/ at vishay semiconductors figure 5. led reverse current vs. led reverse voltage figure 6. switch breakdown voltage vs. temperature figure 7. switch breakdown voltage vs. load current 0 2 4 6 8 10 0 1632486480 18752 led reverse current (a) t = C 40 c t=25c led reverse voltage (v) t=85c C14 C10 C6 C2 2 6 C40 C20 0 20 40 60 80 18753 change in breakdown voltage (%), temperature (c) norm. to 25 c i=0ma i<50 a f l 0 10 20 30 40 50 0 100 200 300 400 500 18754 load current ( a) t=C40c t=85c load voltage (v) t=85c if=0ma il<50ma figure 8.loadcurrentvs.loadvoltage figure 9.currentlimitvs.temperature figure 10.variationino -resistancevs.ledcurrent 0 50 100 150 200 250 300 012345 18755 load current (ma) t=-40c t=85c load voltage (v) t=25c C30 C20 C10 0 10 20 30 C40 C20 0 20 40 60 80 18756 change in current limit (%), temperature (c) norm. to 25 c C2 0 2 4 6 8 10 048121620 18757 ad/dc rCon variation (%), led current (ma) norm. at i = 5 ma f
LH1535AAB/ aabtr/ at document number 83870 rev. 1.3, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 11. led dropout voltage vs. temperature figure 12. insertion loss vs. frequency figure 13. output isolation 1.04 1.08 1.12 1.16 1.20 1.24 C40 C20 0 20 40 60 80 18758 led dropout voltage (v) temperature (c) 0.00 0.05 0.10 0.15 0.20 0.25 100 1000 10000 100000 frequence (hz) 18759 insertion loss (db) r = 600 ? l 0 20 40 60 80 100 120 1000 100000 1000000 frequence (hz) 18760 isolation (db) d v=10v r=50 ? 10000 p l figure 14.switchterminalcapacitancevs.appliedvoltage figure 15.leakagecurrentvs.appliedvoltage figure 16.switchoffsetvoltagevs.ledcurrent 0 5 10 15 20 25 30 0 20406080100 18761 capacitance (pf) i=0ma applied voltage (v) f 0.1 1 10 100 1000 0 100 200 300 400 t C ambient temperature ( c ) 18762 ce0 i(na) 85 c 70 c 50 c 25 c i =0ma amb f 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 18763 switch offset voltage ( v) led current (ma)
www.vishay.com 6 document number 83870 rev. 1.3, 26-oct-04 LH1535AAB/ aabtr/ at vishay semiconductors figure 17. switch offset voltage vs. temperature figure 18. led current for swit ch turn-on vs. temperature figure 19. led current vs. load voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 35 45 55 65 75 85 18764 switch offset voltage ( v) i =5ma temperature (c) f C50 50 150 250 350 C40 10 60 18765 led forward current for ambient temperature (c) switch turnCon (%), norm to 25 c 0 1 2 3 4 5 6 7 012345 18766 load voltage (v) 85 c led current (ma) 25 c C40c i = 100 ma l figure 20.turn-offtimevs.ledcurrent figure 21.turn-ontimevs.ledcurrent figure 22.turn-offtimevs.temperature 0.3 0.4 0.5 0.6 0.7 0.8 0 1020304050 18767 turnCoff time (ms) 85 c 25 c led forward current (ma) C40 c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1020304050 18768 turnCon time (ms) i = 50 ma 85 c led forward current (ma) C40c 25 c l C20 C12 C4 4 12 20 C40 C20 0 20 40 60 80 18769 change in t urnCoff time (%) i =5ma i=50ma temperature (c) norm. to 25 c f l
LH1535AAB/ aabtr/ at document number 83870 rev. 1.3, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) C30 C20 C10 0 10 20 30 C40 C20 0 20 40 60 80 18770 change in turnCon time (%) i =5ma i = 50 ma temperature (c) norm. to 25 c f l figure 23. turn-on time vs. temperature .014 (.35) .010 (.25) .150 (3.81) .110 (2.79) .150 (3.81) .130 (3.30) .020 (.051) min. .300 (7.62) typ. .035 (0.90) .031 (0.80) .100 (2.54) typ. .039 (1.00) min. .022 (0.55) .018 (0.45) .256 (6.50) .248 (6.30) .343 (8.70) .335 (8.50) pin one id. 6 5 4 1 2 3 18 typ. .347 (8.82) .300 (7.62) 4 typ. dip isomethoda i178001
www.vishay.com 8 document number 83870 rev. 1.3, 26-oct-04 LH1535AAB/ aabtr/ at vishay semiconductors package dimensions in inches (mm) .343 (8.71) .335 (8.51) .256 (6.50) .248 (6.30) pin one i.d. .039 (0.99) min. .150 (3.81) .130 (3.30) .100 (2.54) .052 (1.33) .048 (1.22) 4 .040 (1.016) .020 (0.508) .0098 (.25) .0040 (.10) .012 (0.31) .008 (0.20) .300 (7.62) .395 (10.03) .375 (9.63) 3 to 7 18 min. .315 (8.00) typ. .050 (1.27) typ. smd iso method a i178002 .100 (2.54) r .010 (.25) .070 (1.78) .030 (.76) .060 (1.52) .315 (8.00) min .435 (11.05)
LH1535AAB/ aabtr/ at document number 83870 rev. 1.3, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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